Part # FQA13N80_F109 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA13N80_F109 800V N-Channel MOSF


Part Details:

FQA13N80_F109 800V N-Channel MOSF July 2007 QFET ® FQA13N80_F109800V N-Channel MOSFET Features Description · 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge ( typical 68 nC) transistors are produced using Fairchild s proprietary, planar · Low Crss ( typical 30pF) stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored to · 100% avalanche tested minimize on-state resistance, provide superior switching · Improved dv/dt capability performance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology. ET D G TO-3PN G D S FQA Series S Absolute Maximum Ratings Symbol Parameter FQA13N80_F109 Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 12.6 A - Continuous (TC = 100°C) 8.0 A IDM Drain Current - Pulsed (Note 1) 50.4 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2)


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FQA13N80_F109.pdf Datasheet