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Part Manufacturer: ST Microelectronics

Part Description: High voltage fast-switching NPN power transistor

Part Details:

® BUL312FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s HIGH VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION s VERY HIGH SWITCHING SPEED s FULLY CHARACTERIZED AT 125oC s LARGE RBSOA s FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING 3 2 1 APPLICATIONS s HORIZONTAL DEFLECTION FOR TV TO-220FP s SMPS s ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING DESCRIPTION The BUL312FP is manufactured using highvoltage Multi Epitaxial Planar technology for high INTERNAL SCHEMATIC DIAGRAM switching speeds and high voltage capability. Ituses a Cellular Emitter structure with planar edgetermination to enhance switching speeds whilemaintaining a wide RBSOA. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 1150 V VCEO Collector-Emitter Voltage (IB = 0) 500 V VEBO Emitter-Base Voltage (IC = 0) 9 V IC Collector Current 5 A ICM Collector Peak Current (tp <5 ms)

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BUL312FP.pdf Download PDF Datasheet