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Part Manufacturer: Fairchild Semiconductor

Part Description: FQB3N90 FQI3N90 900V N-Channel MOSF

Part Details:

September 2000 QFETTM 0 / FQI3N90 FQB3N90 / FQI3N90 N9 900V N-Channel MOSFET FQB3 General Description Features These N-Channel enhancement mode power field effect · 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 20 nC) planar stripe, DMOS technology. · Low Crss ( typical 8.0 pF) This advanced technology has been especially tailored to · Fas t switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply. D D ! " ! " G ! " ! " G S D2-PAK I2-PAK G D S ! FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB3N90 / FQI3N90 Units VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 3.6 A - Continuous (TC = 100°C)

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FQB3N90.pdf Datasheet