Part # RN1970 RN1971 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)


Part Details:

RN1970,RN1971 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1970,RN1971 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2970~RN2971 Equivalent Circuit JEDEC JEITA Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) TOSHIBA 2-2J1B Weight: 6.8mg(typ.) Characterisstic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC* 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C *: Total rating Equivalent Circuit (Top View) 1 2005-02-22 RN1970,RN1971 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Test Characteristic Symbol


Please click the following link to download the datasheet:

RN1970 RN1971.pdf Datasheet