Part # 2SA1905 datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Part Details:

2SA1905 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1905 High-Current Switching Applications. Unit: mm · Low collector saturation voltage: VCE (sat) = -0.4 V (max) · High speed switching time: tstg = 1.0 µs (typ.) · Complementary to 2SC5076 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -5 A Base current IB -1 A Collector power dissipation PC 1.3 W Junction temperature T j 150 °C JEDEC Storage temperature range Tstg -55 to 150 °C JEITA TOSHIBA 2-8M1A Weight: 0.55 g (typ.) 1 2004-07-07 2SA1905 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min

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2SA1905.pdf Datasheet