FreeDatasheets.com

Part Manufacturer: Fairchild Semiconductor

Part Description: FJV3115R NPN Epitaxial Silicon Transistor

Part Details:

FJV3 115R FJV3115R Switching Application (Bias Resistor Built In)· Switching circuit, Inverter, Interface circuit, Driver Circuit 3 · Built in bias Resistor (R1=2.2K, R2=10K) 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R35 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current 100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter

Please click the following link to download the datasheet:

FJV3115R.pdf Download PDF Datasheet