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Part Manufacturer: Motorola

Part Description: RFR214B IRFU214B 250V N-Channel MOSF

Part Details:

IRF November 2001 R214B / I IRFR214B / IRFU214B RF 250V N-Channel MOSFET U21 General Description Features 4B These N-Channel enhancement mode power field effect · 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 8.1 nC) planar, DMOS technology. · Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters andswitch mode power supplies. D D ! G! D-PAK I-PAK G S IRFR Series G D S IRFU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRFR214B / IRFU214B Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 2.2

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