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Part Manufacturer: Fairchild Semiconductor

Part Description: FDG6322C Dual N & P Channel Digital F

Part Details:

June 2008 FDG6322C Dual N & P Channel Digital FET General Description Features These dual N & P-Channel logic level enhancement mode N-Ch 0.22 A, 25 V, R = 4.0 @ V = 4.5 V, DS(ON) GS field effect transistors are produced using Fairchild s R = 5.0 @ V = 2.7 V. DS(ON) GS proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize P-Ch -0.41 A,-25V, R = 1.1 @ V = -4.5V, DS(ON) GS on-state resistance. This device has been designed R = 1.5 @ V = -2.7V. DS(ON) GS especially for low voltage applications as a replacement forbipolar digital transistors and small signal MOSFETs. Since Very small package outline SC70-6. bias resistors are not required, this dual digital FET canreplace several different digital transistors, with different bias Very low level gate drive requirements allowing direct resistor values. operation in 3 V circuits (V < 1.5 V). GS(th) Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). SC70-6 SOT-23 SuperSOTTM-6 SOT-8 SO-8 SOIC-14 S2 1 6 G2 Q1 D1 2 5 D2 Q2 G1 pin 1 3

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