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Part Manufacturer: Fairchild Semiconductor

Part Description: FQP6N90C FQPF6N90C 900V N-Channel MOSF

Part Details:

FQP6N90C/F QFETTM FQP6N90C/FQPF6N90C QPF 900V N-Channel MOSFET 6N90 General Description Features These N-Channel enhancement mode power field effect · 6A, 900V, RDS(on) = 2.3 @VGS = 10 V C transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 30 nC) planar stripe, DMOS technology. · Low Crss ( typical 11 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supplies. D ! G! TO-220 TO-220F G D S G D S FQP Series FQPF Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP6N90C FQPF6N90C Units VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 6 6 * A

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