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Part Manufacturer: Fairchild Semiconductor

Part Description: FQP90N10V2 FQPF90N10V2 100V N-Channel MOSF

Part Details:

FQP 90N10V2/ QFET® FQP90N10V2/FQPF90N10V2 FQPF90N10V 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 90 A, 100V, RDS(on) = 0.01 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 147 nC) planar stripe, DMOS technology. · Low Crss ( typical 300 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching 2 · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for DC to DC converters, sychronous rectification,and other applications lowest Rds(on) is required. D ! G! TO-220 TO-220F G D S G D S FQP Series FQPF Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP90N10V2 FQPF90N10V2 Units VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) 90 90 * A - Continuous (TC = 100°C)

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