Part # 2SA2066 datasheet

Part Manufacturer: Toshiba


Part Description: Toshiba

Part Details:

2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications Unit: mm DC-DC Converter Applications · High DC current gain: hFE = 200 to 500 (IC = -0.5 A) · Low collector-emitter saturation: VCE (sat) = -0.27 V (max) · High-speed switching: tf = 55 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -7 V DC IC -5 Collector current A Pulse ICP -10 Base current IB -0.5 A Ta = 25°C 1 Collector power Pc W dissipation Tc = 25°C 20 JEDEC Junction temperature Tj 150 °C JEITA Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-7J1A Weight: 0.36 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol

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2SA2066.pdf Datasheet