Part # RN2907 RN2909 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)


Part Details:

RN2970,RN2971 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2970,RN2971 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1970~RN1971 Equivalent Circuit Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) JEDEC JEITA Characterisstic Symbol Rating Unit TOSHIBA 2-2J1B Weight: 6.8mg(typ.) Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Collector power dissipation PC* 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C * : Total rating Equivalent Circuit (Top View) 1 2005-02-22 RN2970,RN2971 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Test Characteristic Symbol


Please click the following link to download the datasheet:

RN2907 RN2909.pdf Datasheet