Part # FQB65N06 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB65N06 FQI65N06 60V N-Channel MOSF


Part Details:

FQB65N06 May 2001 QFETTM / FQB65N06 / FQI65N06 FQI 60V N-Channel MOSFET 65N06 General Description Features These N-Channel enhancement mode power field effect · 65A, 60V, RDS(on) = 0.016 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 48 nC) planar stripe, DMOS technology. · Low Crss ( typical 100 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well · 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for powermanagement in portable and battery operated products. D D ! " ! " G ! " ! " G S D2-PAK I2-PAK G D S ! FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB65N06 / FQI65N06 Units VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 65


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FQB65N06.pdf Datasheet