Part # FCA20N60_F109 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FCH20N60 FCA20N60 FCA20N60_F109 600V N-Channel MOSF

Part Details:

FCH20N60 / FCA20N60 / FCA20N60 August 2007 SuperFETTM FCH20N60 / FCA20N60 / FCA20N60_F109600V N-Channel MOSFET Features Description · 650V @TJ = 150°C SuperFETTM is, Farichild s proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge · Typ. Rds(on)=0.15 balance mechanism for outstanding low on-resistance and · Ultra low gate charge (typ. Qg=55nC) lower gate charge performance. This advanced technology has been tailored to minimize · Low effective output capacitance (typ. Coss.eff=110pF) conduction loss, provide superior switching performance, and · 100% avalanche tested withstand extreme dv/dt rate and higher avalanche energy.Consequently, SuperFET is very suitable for various AC/DCpower conversion in switching mode operation for system _F109 600V N-Channel MOSFET miniaturization and higher efficiency. D G TO-247 G TO-3P D S FCH Series G D S FCA Series S Absolute Maximum Ratings Symbol Parameter FCH20N60 FCA20N60 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 20 A - Continuous (TC = 100°C) 12.5 A IDM Drain Current - Pulsed (Note 1) 60 A VGSS Gate-Source voltage ± 30

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FCA20N60_F109.pdf Datasheet