Part # FQD18N20V2 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD18N20V2 FQU18N20V2 200V N-Channel MOSF

Part Details:

FQD18N20 QFETTM V2 / F FQD18N20V2 / FQU18N20V2200V N-Channel MOSFET QU18N20V2 General Description Features These N-Channel enhancement mode power field effect · 15A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 20 nC) planar stripe, DMOS technology. · Low Crss ( typical 25 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for low voltage applications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol. D D ! " ! " G ! " ! " D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD18N20V2 / FQU18N20V2 Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 15 A - Continuous (TC = 100°C) 9.75 A IDM

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FQD18N20V2.pdf Datasheet