Part # 2N5771 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N5771 MMBT5771 PNP Switching Transistor

Part Details:

2N5771 / MMBT5771 2N5771 MMBT5771 C E C TO-92 B E SOT-23 B Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switchingat collector currents to 100 mA. Sourced from Process 65. SeePN4258 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 15 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5771 *MMBT5771 PD Total Device Dissipation 350 225 mW Derate above 25°C 2.8 1.8

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2N5771.pdf Datasheet