Part # FQU2N100 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD2N100 FQU2N100 1000V N-Channel MOSF

Part Details:

FQD2N100 February 2002 /FQU2N100 FQD2N100/FQU2N1001000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 1.6A, 1000V, RDS(on) = 9 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 12 nC) planar stripe, DMOS technology. · Low Crss ( typical 5 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for electronic lamp starter and ballast. D D ! G! D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD2N100/FQU2N100 Units VDSS Drain-Source Voltage 1000 V ID Drain Current - Continuous (TC = 25°C) 1.6 A - Continuous (TC = 100°C) 1.0 A IDM

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FQU2N100.pdf Datasheet