Part # 2SC4689 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: Toshiba


Part Details:

2SC4781 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4781 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications · High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 80 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V VCES 30 Collector-emitter voltage V VCEO 10 Emitter-base voltage VEBO 6 V DC IC 4 Collector current A Pulsed ICP 8 JEDEC Base current IB 0.8 A JEITA Collector power dissipation PC 900 mW TOSHIBA 2-5J1A Junction temperature Tj 150 °C Weight: 0.36 g (typ.) Storage temperature range Tstg -55 to 150 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test


Please click the following link to download the datasheet:

2SC4689.pdf Datasheet