Part # 2SC2884 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)


Part Details:

2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amplifier Applications Unit: mm · High DC current gain: hFE = 100 to 320 · Suitable for output stage of 1 watts amplifier · Small flat package · PC = 1.0 to 2.0 W (mounted on a ceramic substrate) · Complementary to 2SA1204 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 160 mA PC 500 PW-MINI Collector power dissipation PC mW 1000 JEDEC (Note 1) JEITA SC-62 Junction temperature Tj 150 °C TOSHIBA 2-5K1A Storage temperature range Tstg -55 to 150 °C Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t) 1 2004-07-07 2SC2884 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test


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2SC2884.pdf Datasheet