Part # FDW2601NZ datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSF


Part Details:

FDW2601NZ D c May 2008 FDW2601NZ tmM u Dual N-Channel 2.5V Specified PowerTrench® al MOSFET N-Channel 2. Features General Description ! 8.2A, 30V rDS(ON) = 0.015, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild r Semiconductor s advanced PowerTrench process that has DS(ON) = 0.020, VGS = 2.5V been especially tailored to minimize the on-state resistance ! Extended V and yet maintain low gate charge for superior switching GS range (±12 V) for battery applications performance. These devices are well suited for portable ! HBM ESD Protection Level of 3.5kV Typical (note 3) electronics applications. 5V Speci ! High performance trench technology for extremely low rDS(ON) ! Low profile TSSOP-8 package Applications fie ! Load switch d Power ! Battery charge ! Battery disconnect circuits Trench® MOSFET D1 D2 G2 S2 S2 D2 G1 S1 S1 G1 G2 D1 Pin 1 S1 S2 TSSOP-8 ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDW2601NZ Rev. A1


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FDW2601NZ.pdf Datasheet