Part # FQA24N60 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA24N60 600V N-Channel MOSF


Part Details:

60 April 2000 4N2AQ QFETTM F FQA24N60600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 23.5A, 600V, RDS(on) = 0.24 @ VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 110 nC) planar stripe, DMOS technology. · Low Crss ( typical 56 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply. D ! " ! " G ! " ! " TO-3P ! G D S FQA Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQA24N60 Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 23.5 A - Continuous (TC = 100°C) 14.9 A IDM Drain Current - Pulsed (Note 1)


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FQA24N60.pdf Datasheet