Part # 2N7002W datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N7002W final_rev

Part Details:

2N7002W -- N-Chann October 2007 2N7002WN-Channel Enhancement Mode Field Effect Transistor Features el Enha · Low On-Resistance· Low Gate Threshold Voltage· Low Input Capacitance ncement · Fast Switching Speed· Low Input/Output Leakage· Ultra-Small Surface Mount Package· Lead Free/RoHS Compliant Mode Field Effect T D S G SOT - 323 Marking : 2N r Absolute Maximum Ratings * Ta = 25°C unless otherwise noted ansistor Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS 1.0M 60 V VGSS Gate-Source Voltage Continuous ±20 V Pulsed ±40 ID Drain Current Continuous 115 Continuous @ 100°C 73 mA Pulsed 800 TJ , TSTG Junction and Storage Temperature Range -55 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissipation 200

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2N7002W.pdf Datasheet