Part # FCB20N60 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FCB20N60 600V N-Channel MOSF

Part Details:

FC July 2005 B20 SuperFETTM N60 60 FCB20N60 0V 600V N-Channel MOSFET N-Ch Features Description a · 650V @TJ = 150°C SuperFETTM is, Farichild s proprietary, new generation of high n voltage MOSFET family that is utilizing an advanced charge n · Typ . RDS(on) = 0.15 e balance mechanism for outstanding low on-resistance and l · Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance. MO · Low effective output capacitance (typ. Coss.eff = 165pF) This advanced technology has been tailored to minimize con- S duction loss, provide superior switching performance, and with- F · 100% avalanche tested stand extreme dv/dt rate and higher avalanche energy. E Consequently, SuperFET is very suitable for various AC/DC T power conversion in switching mode operation for system min-iaturization and higher efficiency. D D G G S S Absolute Maximum Ratings Symbol Parameter FCB20N60 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 20 A - Continuous (TC = 100°C)

Please click the following link to download the datasheet:

FCB20N60.pdf Datasheet