Part # 2SC2873 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)


Part Details:

2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Unit: mm Power Switching Applications · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · High-speed switching time: tstg = 1.0 µs (typ.) · Small flat package · PC = 1.0 to 2.0 W (mounted on a ceramic substrate) · Complementary to 2SA1213 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current I B 0.4 A P JEDEC C 500 Collector power dissipation PC mW JEITA SC-62 1000 (Note 1) TOSHIBA 2-5K1A Junction temperature Tj 150 °C Weight: 0.05 g (typ.) Storage temperature range Tstg -55 to 150 °C Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t) 1 2004-07-07


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2SC2873.pdf Datasheet