Part # 2SA1926 datasheet

Part Manufacturer: Toshiba


Part Description: Toshiba

Part Details:

2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications Unit: mm · High breakdown voltage: VCEO = -400 V Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-base voltage VEBO -7 V DC IC -0.5 Collector current A Pulse ICP -1 Base current IB -0.25 A Collector power dissipation PC 900 mW Junction temperature Tj 150 °C Storage temperature range T stg -55 to 150 °C JEDEC JEITA

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2SA1926.pdf Datasheet