Part # STE38NB50F datasheet

Part Manufacturer: ST Microelectronics

ST Microelectronics

Part Description: N-CHANNEL 500V - 0.11 OHM - 38A - ISOTOP POWERMESH MOSFET

Part Details:

® STE38NB50F N - CHANNEL 500V - 0.11 - 38A - ISOTOP PowerMESHTM MOSFET TYPE VDSS RDS(on) ID STE38NB50F 500 V < 0.14 38 A s TYPICAL RDS(on) = 0.11 s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s LOW INTRINSIC CAPACITANCE s GATE CHARGE MINIMIZED s REDUCED VOLTAGE SPREAD DESCRIPTIONUsing the latest high voltage MESH OVERLAYTM ISOTOP process, STMicroelectronics has designed an ad-vanced family of power MOSFETs with outstand-ing performances. The new patent pending striplayout coupled with the Company s proprietaryedge termination structure, gives the lowestRDS(on) per area, exceptional avalanche and INTERNAL SCHEMATIC DIAGRAM dv/dt capabilities and unrivalled gate charge andswitching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDINGEQUIPMENT AND UNINTERRUPTABLEPOWER SUPPLY AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain- gate Voltage (RGS = 20 k) 500 V VGS Gate-source Voltage ± 30 V

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STE38NB50F.pdf Datasheet