Part # FQPF32N12V2 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQP32N12V2 FQPF32N12V2 120V N-Channel MOSF

Part Details:

FQP 32N12V2/ QFET® FQP32N12V2/FQPF32N12V2 FQPF32N12V 120V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 32 A, 120V, RDS(on) = 0.05 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 41 nC) planar stripe, DMOS technology. · Low Crss ( typical 70 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching 2 · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for DC to DC converters, sychronous rectification,and other applications lowest Rds(on) is required. D ! G! TO-220 TO-220F G D S G D S ! FQPF Series FQP Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP32N12V2 FQPF32N12V2 Units VDSS Drain-Source Voltage 120 V ID Drain Current - Continuous (TC = 25°C) 32 32 * A - Continuous (TC = 100°C)

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FQPF32N12V2.pdf Datasheet