Part # FQD19N10 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD19N10 FQU19N10 100V N-Channel MOSF

Part Details:

10 August 2000 9N1UQ QFETTM FQD19N10 / FQU19N10 0 / F1 100V N-Channel MOSFET 9N1D General Description Features Q These N-Channel enhancement mode power field effect · 15.6A, 100V, R F DS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 19 nC) planar stripe, DMOS technology. · Low Crss ( typical 32 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontrol. D D ! " ! " G ! " ! " D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD19N10 / FQU19N10 Units VDSS Drain-Source Voltage 100 V ID Drain Current

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FQD19N10.pdf Datasheet