Part # 2N5770 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N5770 NPN RF Transistor


Part Details:

2N5770 Discrete POWER & Signal Technologies 2N5770 C TO-92 B E NPN RF Transistor This device is designed for use as RF amplifiers, oscillators andmultipliers with collector currents in the 1.0 mA to 30 mA range.Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Col ector-Base Voltage 30 V VEBO Emitter-Base Voltage 4.5 V IC Col ector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5770 PD Total Device Dissipation 350 mW Derate above 25°C 2.8 mW/°C R Thermal Resistance, Junction to Case 125 ° JC C/W


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2N5770.pdf Datasheet