Part # FQD10N20C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD10N20C FQU10N20C 200V N-Channel MOSF


Part Details:

FQD10N20 QFET® C FQD10N20C / FQU10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 7.8A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 20 nC) planar stripe, DMOS technology. · Low Crss ( typical 40.5 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters foruninterrupted power supplies and motor controls. D ! D G! D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD10N20C / FQU10N20C Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 7.8 A - Continuous (TC = 100°C) 5.0 A


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FQD10N20C.pdf Datasheet