Part # FDN360P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDN360P Single P-Channel, PowerTrench MOSF

Part Details:

FDN360P May 2003 FDN360P Single P-Channel, PowerTrench® MOSFET General Description Features This P-Channel Logic Level MOSFET is produced · ­2 A, ­30 V. R using Fairchild Semiconductor advanced Power Trench DS(ON) = 80 m @ VGS = ­10 V process that has been especially tailored to minimize RDS(ON) = 125 m @ VGS = ­4.5 V the on-state resistance and yet maintain low gate charge for superior switching performance. · Low gate charge (6.2 nC typical) These devices are well suited for low voltage and · High performance trench technology for extremely battery powered applications where low in-line power low R loss and fast switching are required. DS(ON) . · High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. D D S G S G SuperSOT -3 TM Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage ­30 V VGSS Gate-Source Voltage ±20 V ID Drain Current ­ Continuous (Note 1a) ­2 A

Please click the following link to download the datasheet:

FDN360P.pdf Datasheet