Part # ISL9N302AS3ST datasheet

Part Manufacturer: Motorola


Part Description: SL9N302AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

Part Details:

ISL9 April 2002 N302AS3 ISL9N302AS3ST ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET · Fast switching technology and features low gate charge while maintaininglow on-resistance. · rDS(ON) = 0.0019 (Typ), VGS = 10V Optimized for switching applications, this device improves · rDS(ON) = 0.0027 (Typ), VGS = 4.5V the overall efficiency of DC/DC converters and allowsoperation to higher switching frequencies. · Qg (Typ) = 110nC, VGS = 5V Applications · Qgd (Typ) = 31nC · DC/DC converters · CISS (Typ) = 11000pF DRAIN (FLANGE) D GATE G SOURCE S TO-263AB MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current Continuous (T 75 A C = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) 75 A Continuous (TC = 25oC, VGS = 10V, RJA = 43oC/W) 28 A Pulsed Figure 4

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ISL9N302AS3ST.pdf Datasheet