Part # 2SA817A datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Part Details:

2SA817A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA817A Driver-Stage Amplifier Applications Unit: mm Voltage Amplifier Applications · Complementary to 2SC1627A. · Driver stage application of 30 to 35 watts amplifiers. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -400 mA Emitter current IE 400 mA Collector power dissipation PC 800 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C JEDEC TO-92MOD JEITA TOSHIBA 2-5J1A Electrical Characteristics (Ta = 25°C) Weight: 0.36 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Col ector cut-off current ICBO

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2SA817A.pdf Datasheet