Part # FQB19N20C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB19N20C FQI19N20C 200V N-Channel MOSF

Part Details:

FQB19N20C/FQI19N20C QFET® FQB19N20C/FQI19N20C200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. · Low Crss ( typical 85 pF) This advanced technology has been especially tailored to · Fas t switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology. D D G D2-PAK I2-PAK G S FQB Series FQI Series G D S S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB19N20C / FQI19N20C Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 19.0 A - Continuous (TC = 100°C) 12.1 A IDM Drain Current - Pulsed (Note 1)

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FQB19N20C.pdf Datasheet