Part # FQD2N60C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD2N60C FQU2N60C 600V N-Channel MOSF

Part Details:

FQD2 QFET® N60C/FQU2 FQD2N60C/FQU2N60C 600V N-Channel MOSFET N60 Features Description C 60 · 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild s proprietary, planar stripe, · Low gate charge (typical 8.5 nC) 0V DMOS technology. · Low Crss (typical 4.3 pF) N-Cha This advanced technology has been especially tailored to mini- · Fast switching mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and · 100% avalanche tested commutation mode. These devices are well suited for high effi- nne · Improved dv/dt capability ciency switched mode power supplies, active power factor cor-rection, electronic lamp bal asts based on half bridge topology. l MOS D F ! D ET G ! D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings Symbol Parameter FQD2N60C / FQU2N60C Units VDSS Drain-Source Voltage 600 V ID Drain Current

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FQD2N60C.pdf Datasheet