Part # FQD16N25C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD1625C 250V N-Channel MOSF

Part Details:

FQD16N25C 250V March 2006 QFET ® FQD16N25C250V N-Channel MOSFET N-Channe Features Description · 16A, 250V, RDS(on) = 0.27 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge ( typical 41 nC) transistors are produced using Fairchild s proprietary, planar · Low Crss ( typical 68 pF) stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored to l MOSFE · 100% avalanche tested minimize on-state resistance, provide superior switching · Improved dv/dt capability performance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for highefficiency switching DC/DC converters, switch mode powersupplies, DC-AC converters for uninterrupted power supplies T and motor controls. D G D-PAKFQD Series S Absolute Maximum Ratings Symbol Parameter FQD16N25C Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 16 A - Continuous (TC = 100°C) 10.1 A IDM Drain Current - Pulsed (Note 1) 64 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy

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FQD16N25C.pdf Datasheet