Part # FDJ129P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDJ129P P-Channel -2.5 Vgs Specified PowerTrench® MOSF

Part Details:

FDJ129P November 2007 FDJ129P tm P-Channel -2.5 Vgs Specified PowerTrench MOSFET General Description Features This P-Channel -2.5V specified MOSFET uses · ­4.2 A, ­20 V. R Fairchild s advanced low voltage PowerTrench process. DS(ON) = 70 m @ VGS = ­4.5 V It has been optimized for battery power management RDS(ON) = 120 m @ VGS = ­2.5 V applications. · Low gate charge Applications · High performance trench technology for extremely · Battery management low RDS(ON) · Load switch · Compact industry standard SC75-6 surface mount package · RoHS Compliant G Bottom Drain S 4 3 S 5 2 S 6 1 SC75-6 FLMP S S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage ­20 V VGSS Gate-Source Voltage

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FDJ129P.pdf Datasheet