Part # FQD5P10 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD5P10 FQU5P10 100V P-Channel MOSF

Part Details:

FQD5P 10 / QFETTM F FQD5P10 / FQU5P10 QU 100V P-Channel MOSFET 5P10 General Description Features These P-Channel enhancement mode power field effect · -3.6A, -100V, RDS(on) = 1.05 @VGS = -10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. · Low Crss ( typical 18 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontrol. D D G D-PAK I-PAK G S FQD Series FQU Series G D S S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD5P10 / FQU5P10 Units VDSS Drain-Source Voltage -100 V ID Drain Current - Continuous (TC = 25°C) -3.6 A - Continuous (TC = 100°C) -2.28 A IDM Drain Current - Pulsed (Note 1) -14.4

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FQD5P10.pdf Datasheet