Part # FQB6N60 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB6N60 FQI6N60 600V N-Channel MOSF

Part Details:

60 April 2000 I6N FQ QFETTM FQB6N60 / FQI6N60600V N-Channel MOSFET B6N60 /FQ General Description Features These N-Channel enhancement mode power field effect · 6.2A, 600V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 20 nC) planar stripe, DMOS technology. · Low Crss ( typical 10 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply. D D ! " ! " G ! " ! " G S D2-PAK I2-PAK G D S ! FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB6N60 / FQI6N60 Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 6.2 A - Continuous (TC = 100°C)

Please click the following link to download the datasheet:

FQB6N60.pdf Datasheet