Part # FQB24N08 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB24N08 FQI24N08 80V N-Channel MOSF

Part Details:

August 2000 QFETTM FQB24N08 / FQI24N0880V N-Channel MOSFET General Description Features FQB24N08 / FQI24N08 These N-Channel enhancement mode power field effect · 24A, 80V, RDS(on) = 0.06 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 19 nC) planar stripe, DMOS technology. · Low Crss ( typical 50 pF) This advanced technology has been especially tailored to · Fas t switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well · 175°C maximum junction temperature rating suited for low voltage applications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol. D D ! " ! " G ! " ! " G S D2-PAK I2-PAK G D S ! FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB24N08 / FQI24N08 Units VDSS Drain-Source Voltage 80 V ID Drain Current - Continuous (TC = 25°C) 24 A - Continuous (TC = 100°C) 17

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FQB24N08.pdf Datasheet