Part # KSB811 datasheet

Part Manufacturer: Motorola


Part Description: KSB811 PNP Epitaxial Silicon Transistor

Part Details:

KSB811 KSB811 Audio Frequency Power Amplifier · Complement to KSD1021· Collector Current : IC= -1A · Collector Power Dissipation : PC=350mW 1 TO-92S 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.0 A PC Collector Power Dissipation 350 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE= 0 -30 V BVCEO Collector-Emitter Breakdown Voltage

Please click the following link to download the datasheet:

KSB811.pdf Datasheet