Part # FDC3616N datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDC3616N 100V N-Channel PowerTrench MOSF

Part Details:

FDC3616N January 2004 FDC3616N 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 3.7 A, 100 V. R specifically to improve the overall efficiency of DC/DC DS(ON) = 70 m @ VGS = 10 V converters using either synchronous or conventional RDS(ON) = 80 m @ VGS = 6.0 V switching PWM controllers. It has been optimized for low gate charge, low R · High performance trench technology for extremely DS(ON) and fast switching speed. low RDS(ON) Applications · Low gate charge (23nC typical) · DC/DC converter · High power and current handling capability · Load Switching · Fast switching speed. Bottom Drain G 1 6 S S S 2 5 S 3 4 S SuperSOT-6TM FLMP Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ± 20 V ID

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FDC3616N.pdf Datasheet