Part # 2SC3666 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: Toshiba


Part Details:

2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3666 Audio Power Amplifier Applications Unit: mm · High DC current gain: hFE (1) = 100 to 320 · High power dissipation: PC = 1000 mW Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 1 A Base current IB 0.1 A Collector power dissipation PC 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C JEDEC JEITA TOSHIBA 2-7D101A Electrical Characteristics (Ta = 25°C) Weight: 0.2 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Col ector cut-off current


Please click the following link to download the datasheet:

2SC3666.pdf Datasheet