Part # FQB5N20L datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB5N20L FQI5N20L 200V LOGIC N-Channel MOSF


Part Details:

FQB5N20L / FQI December 2000 QFETTM FQB5N20L / FQI5N20L200V LOGIC N-Channel MOSFET 5N20L General Description Features These N-Channel enhancement mode power field effect · 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. · Low Crss ( typical 6.0 pF) This advanced technology is especially tailored to minimize · Fast switching on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation modes. These devices are · Low level gate drive requirement allowing direct well suited for high efficiency switching DC/DC converters, operation from logic drivers switch mode power supplies, and motor control. D D ! " ! " G ! " ! " G S D2-PAK I2-PAK G D S ! FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB5N20L / FQI5N20L Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 4.5


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FQB5N20L.pdf Datasheet