Part # FDS6673BZ datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDS6673BZ P-Channel PowerTrench MOSF


Part Details:

FDS6673BZ P-Channel July 2008 FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8m General Description Features This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m, VGS = -10V, ID = -14.5A Semiconductor s advanced Power Trench process that PowerTr Max rDS(on) = 12m, VGS = -4.5V, ID = -12A has been especially tailored to minimize the on-state resistance. Extended VGS range (-25V) for battery applications This device is well suited for Power Management and HBM ESD protection level of 6.5kV typical (note 3) load switching applications common in Notebook High performance trench technology for extremely low e Computers and Portable Battery Packs. r nch DS(on) High power and current handling capability ® MO RoHS compliant SFET D D 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage -30 V VGS


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FDS6673BZ.pdf Datasheet