Part # FDC5612 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDC5612 60V N-Channel PowerTrench MOSF

Part Details:

FDC5612 December 2004 FDC561260V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed · 4.3 A, 60 V. R = 0.055 @ V = 10 V specifically to improve the overall efficiency of DC/DC DS(ON) GS converters using either synchronous or conventional RDS(ON) = 0.064 @ VGS = 6 V switching PWM controllers. · Low gate charge (12.5nC typical). These MOSFETs feature faster switching and lower gatecharge than other MOSFETs with comparable RDS(ON) · Fast switching speed. specifications. The result is a MOSFET that is easy and safer to drive · High performance trench technology for extremely (even at very high frequencies), and DC/DC power supply low R . DS(ON) designs with higher overall efficiency. · SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). S 1 6 D D 2 5 G D 3 4 SuperSOTTM -6 D Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current

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FDC5612.pdf Datasheet