Part # FCD4N60 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FCD4N60 600V N-Channel MOSF


Part Details:

FCD4N60 600V N- October 2006 SuperFET TM FCD4N60 600V N-Channel MOSFET Channel M Features Description · 650V @TJ = 150°C SuperFETTM is, Farichild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge · Typ . RDS(on) = 1.0 balance mechanism for outstanding low on-resistance and · Ultra low gate charge (typ. Qg = 12.8nC) lower gate charge performance. O · Low effective output capacitance (typ. C This advanced technology has been tailored to minimize SFET oss.eff = 32pF) conduction loss, provide superior switching performance, and · 100% avalanche tested withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D D D-PAK G G S FCD Series S Absolute Maximum Ratings Symbol Parameter FCD4N60 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 3.9 A - Continuous (TC = 100°C) 2.5 A IDM Drain Current - Pulsed (Note 1) 11.7 A VGSS Gate-Source voltage ± 30


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FCD4N60.pdf Datasheet