Part # FDS8812NZ datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDS8812NZ N-Channel PowerTrench® MOSF


Part Details:

FDS8812NZ N-Channel PowerTrench March 2007 FDS8812NZ tm N-Channel PowerTrench® MOSFET 30V, 20A, 4.0mFeatures General Description Max r This N-Channel MOSFET is produced using Fairchild DS(on) = 4.0m at VGS = 10V, ID = 20A Semiconductor s advanced PowerTrench® process that has Max rDS(on) = 4.9m at VGS = 4.5V, ID =18A been especially tailored to minimize the on-state resistance. HBM ESD protection level of 6.4kV typical (note 3) This device is well suited for Power Management and load High performance trench technology for extremely low rDS(on) switching applications common in Notebook Computers and High power and current handling capability Portable Battery Packs. RoHS compliant ® MO SFE T D D D G D D D S G D S SO-8 S S D S Pin 1 S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (Note 1a) 20


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FDS8812NZ.pdf Datasheet