Part # 2SA1201 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)


Part Details:

2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1314 Strobe Flash Applications Unit: mm Audio Power Applications · High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = -1 V, IC = -0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = 1 V, IC = -4 A) · Low saturation voltage : VCE (sat) = -0.5 V (max) (IC = -2 A, IB = -50 mA) · Small package · Complementary to 2SC2982 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -10 V Emitter-base voltage VEBO -6 V PW-MINI DC IC -2 JEDEC Collector current Pulsed A JEITA SC-62 ICP -4 (Note 1) TOSHIBA 2-5K1A Base current IB -2 A Weight: 0.05 g (typ.) PC 500 Collector power dissipation PC mW 1000 (Note 2) Junction temperature Tj 150 °C Storage temperature range


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2SA1201.pdf Datasheet