Part # FDC634P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDC634P P-Channel 2.5V Specified PowerTrench MOSF


Part Details:

FDC63 September 2001 4P FDC634P P-Channel 2.5V Specified PowerTrench® MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses · ­3.5 A, ­20 V. R Fairchild s low voltage PowerTrench process. It has DS(ON) = 80 m @ VGS = ­4.5 V been optimized for battery power management RDS(ON) = 110 m @ VGS = ­2.5 V applications. · Low gate charge (7.2 nC typical) Applications · High performance trench technology for extremely · Battery management low RDS(ON) · Load switch · Battery protection S D D 1 6 2 5 G D D 3 4 SuperSOT -6 TM Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage ­20 V VGSS Gate-Source Voltage ±8 V ID Drain Current ­ Continuous


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FDC634P.pdf Datasheet